BC817UPNE6327(2011) 查看數據表（PDF） - Infineon Technologies
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BC817UPNE6327 Datasheet PDF : 7 Pages
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BC817UPN
DC current gain hFE = ƒ(IC)
VCE = 1 V
10 3
10 2
105 °C
85 °C
65 °C
25 °C
-40 °C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
10 3 BC 817/818
mA
ΙC
10 2
5
150 ˚C
25 ˚C
-50 ˚C
EHP00223
10 1
5
10 0
5
10
1
10
-5
10 -4
10 -3
10 -2
10 -1 A 10 0
IC
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
10 -1
0
0.2
0.4
0.6 V 0.8
VCEsat
Collector cutoff current ICBO = ƒ(TA)
VCBO = 25 V
10 3 BC 817/818
mA
ΙC
10 2
5
150 ˚C
25 ˚C
-50 ˚C
10 1
5
10 0
5
EHP00222
10 5 BC 817/818
nA
Ι CBO
10 4
10 3
10 2
10 1
EHP00221
max
typ
10 -1
0
1.0
2.0
3.0 V 4.0
V BEsat
10 0
0
50
100 ˚C 150
TA
3
2011-09-15
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