BC817UPNB6327 查看數據表（PDF） - Infineon Technologies
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BC817UPNB6327 Datasheet PDF : 7 Pages
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NPN Silicon AF Transistor Array
• For AF stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated
NPN/PNP transistors in one package
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
BC817UPN
4
5
3
6
2
1
Tape loading orientation
C1
B2
E2
6
5
4
Top View
654
W1s
123
Direction of Unreeling
Marking on SC74 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
SC74_Tape
TR2
TR1
1
2
3
E1
B1
C2
EHA07177
Type
BC817UPN
Marking
Pin Configuration
Package
1Bs
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
TS ≤ 115 °C
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Junction temperature
Tj
Storage temperature
Tstg
1Pb-containing package may be available upon special request
Value
Unit
45
V
50
5
500
mA
1000
100
200
330
mW
150
°C
-65 ... 150
1
2007-04-20
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