K1603 查看數據表（PDF） - Inchange Semiconductor
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K1603 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1603
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
900
V
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
1.5
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=1.5A
IGSS
Gate Source Leakage Current
VGS= ±25V;VDS= 0
3.5
V
6.4
Ω
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS=720V; VGS= 0
100
uA
VSD
Diode Forward Voltage
IF=2.5A; VGS=0
2.0
V
tr
Rise time
25
50
ns
ton
Turn-on time
tf
Fall time
VGS=10V;ID=1.5A;RL=267Ω
40
60
ns
40
80
ns
toff
Turn-off time
150 300
ns
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