BD241 查看數據表（PDF） - Inchange Semiconductor
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BD241 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD241/A/B/C
DESCRIPTION
·
·With TO-220C package
·Complement to type BD242/A/B/C
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
BD241
VCBO
Collector-base voltage
BD241A
BD241B
Open emitter
BD241C
BD241
VCEO
Collector-emitter voltage
BD241A
BD241B
Open base
BD241C
VEBO
Emitter-base voltage
Open collector
IC
Collector current
ICM
Collector current-peak
IB
Base current
PC
Collector power dissipation
TC=25℃
Tj
Junction temperature
Tstg
Storage temperature
VALUE
55
70
90
115
45
60
80
100
5
3
5
1
40
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
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