BST39 查看數據表（PDF） - Philips Electronics

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BST39

NPN high-voltage transistors

Philips Electronics 

Philips Semiconductors

NPN high-voltage transistors

Product specification

BST39; BST40

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

Rth j-s

thermal resistance from junction to ambient

note 1

thermal resistance from junction to soldering point

96

K/W

16

K/W

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.

For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

ICBO

IEBO

hFE

VCEsat

Cc

fT

collector cut-off current

IE = 0; VCB = 300 V

−

emitter cut-off current

IC = 0; VEB = 5 V

−

DC current gain

IC = 20 mA; VCE = 10 V

−

collector-emitter saturation voltage IC = 50 mA; IB = 4 mA

−

collector capacitance

IE = ie = 0; VCB = 10 V; f = 1 MHz

−

transition frequency

IC = 10 mA; VCE = 10 V; f = 100 MHz 70

MAX.

20

100

40

500

2

−

UNIT

nA

nA

mV

pF

MHz

1999 Apr 26

3

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