2N6661 查看數據表（PDF） - Semelab - > TT Electronics plc

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产品描述 (功能)

生产厂家

2N6661

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Semelab - > TT Electronics plc  

N-CHANNEL ENHANCEMENT

MODE POWER MOSFET

2N6661

• VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω

• Fast Switching

• Low Threshold Voltage (Logic Level)

• Low CISS

• Integral Source-Drain Body Diode

• Hermetic Metal TO39 Package

• High Reliability Screening Options Available

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

VDS

Drain – Source Voltage

90V

VGS

Gate – Source Voltage

±20V

ID

Continuous Drain Current

TC = 25°C

0.9A

IDM

Pulsed Drain Current (1)

3.0A

PD

Total Power Dissipation at

TC ≤ 25°C

5W

De-rate TC > 25°C

40mW/°C

PD

Total Power Dissipation at

TA ≤ 25°C

725mW

De-rate TA > 25°C

5.8mW/°C

TJ

Operating Temperature Range

-55 to +150°C

Tstg

Storage Temperature Range

-65 to +150°C

THERMAL PROPERTIES

Symbols Parameters

RθJC

Thermal Resistance, Junction To Case

RθJA

Thermal Resistance, Junction To Ambient

Notes

(1) Repetitive Rating: Pulse width limited by maximum junction temperature

(2) Pulse Width ≤ 300us, δ ≤ 2%

Min.

Typ.

Max. Units

25 °C/W

172 °C/W

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Document Number 3092

Website: http://www.semelab-tt.com

Issue 5

Page 1 of 3

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