BYT13-1000 查看數據表（PDF） - Digitron Semiconductors
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BYT13-1000 Datasheet PDF : 3 Pages
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DIGITRON SEMICONDUCTORS
BYT13-600 – BYT13-1000
FAST RECOVERY RECTIFIER DIODES
MAXIMUM RATINGS
Symbol
Parameter
IFRM
Repetitive peak forward current
tp ≤ 20µS
IF(AV)
Average forward current *
TA = 55°C
= 0.5
IFSM
Ptot
Surge non-repetitive forward current
Power dissipation *
tp = 10ms sinusoidal
TA = 55°C
Tstg
Storage and junction temperature range
TJ
TL
Maximum lead temperature for soldering during 10s at 4mm from case
Rth (j-a)
Junction-ambient *
* On infinite heatsink with 10mm lead length
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
600
600
BYT13-
800
800
1000
1000
ELECTRICAL CHARACTERISTICS
Value
50
3
100
3.75
-40 to +150
230
25
Unit
A
A
A
W
°C
°C
°C/W
Unit
V
Symbol
IR
VF
Test Conditions
TJ = 25°C
VR = VRRM
IF = 3A
RECOVERY CHARACTERISTICS
symbol
Test Conditions
trr
TJ = 25°C IF = 0.5A
IR = 1A
Min.
Irr = 0.25A
Typ.
Min.
Max.
20
1.3
Unit
µA
V
Typ.
Max.
150
Unit
ns
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20121228
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