BUZ32 查看數據表（PDF） - Siemens AG
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BUZ32 Datasheet PDF : 9 Pages
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BUZ 32
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
22 Ptot = 75W
A
ID
18
16
14
12
10
8
6
4
l kj
i VGS [V]
a 4.0
h
b 4.5
c 5.0
g
d 5.5
e 6.0
f
f 6.5
g 7.0
e h 7.5
i 8.0
j 9.0
d
k 10.0
l 20.0
c
b
2
a
0
0 2 4 6 8 10 12 V 16
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
13
A
11
ID
10
9
8
7
6
5
4
3
2
1
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
1.3
Ω
1.1
RDS (on) 1.0
a bc
d
ef gh
0.9
0.8
0.7
0.6
0.5
0.4
i
j
0.3
k
0.2 VGS [V] =
0.1
abc
4.05 5.0 5.5
0.0
0
4
def g
6.0 6.5 7.0 7.5
8
12
hi j k
8.0 9.0 10.0 20.0
16 A 22
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
6.0
S
5.0
gfs
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
2
4
6
8
A
12
ID
Semiconductor Group
6
07/96
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