1N6642USE3 查看數據表（PDF） - Microsemi Corporation

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1N6642USE3

VOIDLESS HERMETICALLY SEALED SWITCHING DIODES

Microsemi Corporation 

1N6638US, 1N6642US, 1N6643US

Available on

commercial

versions

VOIDLESS HERMETICALLY SEALED

SWITCHING DIODES

Qualified per MIL-PRF-19500/578

DESCRIPTION

This popular surface mount equivalent JEDEC registered switching/signal diodes are military

qualified and available with internal metallurgical bonded construction. These small low

capacitance diodes with very fast switching speeds are hermetically sealed and bonded into a

“D-5B” package. They may be used in a variety of fast switching applications including

computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire

memories, as well as decoding or encoding applications, etc. Microsemi also offers a variety

of other switching/signal diodes.

Important: For the latest information, visit our website http://www.microsemi.com.

FEATURES

• JEDEC registered surface mount equivalents of 1N6638, 1N6642, and 1N6643.

• Ultra fast recovery time.

• Very low capacitance.

• Metallurgically bonded.

• Non-cavity glass package.

• JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/578.

• Replacements for 1N4148UR, 1N4148UR-1, 1N4150UR-1, and 1N914UR.

• RoHS compliant devices available (commercial grade only).

Qualified Levels:

JAN, JANTX,

JANTXV and JANS

“B” SQ-MELF

(D-5B) Package

Also available in:

“D” Package

(axial-leaded)

1N6638_42_43

APPLICATIONS / BENEFITS

• Small size for high density mounting (see package illustration).

• Ideal for:

High frequency data lines

RS-232 & RS–422 Interface Networks

Ethernet: 10 Base T

Switching core drivers

LAN

Computers

MAXIMUM RATINGS @ TA = +25 oC unless otherwise noted.

Parameters/Test Conditions

Symbol

Value

Unit

Junction and Storage Temp

Thermal Resistance Junction-to-End Cap

Thermal Resistance Junction-to-Ambient (1)

Peak Forward Surge Current @ TA = +25 oC

(Test pulse = 8.3 ms, half-sine wave.)

Average Rectified Forward Current @ TA = +75 oC

(Derate at 4.6 mA/°C Above TEC = + 110 °C)

TJ and TSTG

RӨJEC

RӨJA

IFSM

-65 to +175

40

250

2.5

oC

oC/W

oC/W

A

IO

300

mA

Breakdown Voltage:

1N6638US

VBR

1N6642US

150

V

100

1N6643US

75

Working Peak Reverse Voltage:

1N6638US

1N6642US

VRWM

125

V

75

1N6643US

50

NOTES: 1. TA = +75 °C on printed circuit board (PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu,

horizontal, in still air; pads for US = .061 inch (1.55 mm) x .105 inch (2.67 mm); RΘJA with a defined PCB

thermal resistance condition included, is measured at IO = 300 mA.

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

1-800-446-1158

Tel: (978) 620-2600

Fax: (978) 689-0803

MSC – Ireland

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Website:

www.microsemi.com

T4-LDS-0218-1, Rev. 1 (111513)

©2011 Microsemi Corporation

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