1N6642USE3 查看數據表（PDF） - Microsemi Corporation
零件编号
产品描述 (功能)
生产厂家
1N6642USE3 Datasheet PDF : 5 Pages
| |||
1N6638US, 1N6642US, 1N6643US
MECHANICAL and PACKAGING
• CASE: Voidless hermetically sealed hard glass.
• TERMINALS: Tin-lead plate with >3% lead. Solder dip is available upon request.
• MARKING: Body painted and alpha numeric.
• POLARITY: Cathode indicated by band.
• Tape & Reel option: Standard per EIA-481-1-A with 12 mm tape. Consult factory for quantities.
• See Package Dimensions on last page.
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = commercial
JEDEC type number
See Electrical Characteristics
table
PART NOMENCLATURE
JAN 1N6638 US (e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Surface Mount Package
Symbol
VBR
VRWM
VF
IR
C
trr
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current is
reached.
ELECTRICAL CHARACTERISTICS @ 25oC unless otherwise noted.
TYPE
NUMBER
1N6638US
1N6642US
1N6643US
MAXIMUM
FORWARD
VOLTAGE
VF @ IF
V @ mA
0.8 V @ 10 mA
0.8 V @ 10 mA
0.8 V @ 10 mA
V @ mA
1.1 V @ 200 mA
1.2 V @ 100 mA
1.2 V @ 100 mA
MAXIMUM DC REVERSE CURRENT
IR1
VR=
20 V
IR2
VR=VRWM
nA
nA
35
500
25
500
50
500
IR3
VR=20 V
TA=
+150 oC
µA
50
50
75
IR4
VR=VRWM
TA=
+150 oC
µA
100
100
100
REVERSE
RECOVERY
TIME
trr
(Note 1)
MAXIMUM
FORWARD
RECOVERY
VOLTAGE AND
TIME
IF=200mA, tr=1ns
VFRM
tfr
ns
V
ns
4.5
5.0
20
5.0
5.0
20
6.0
5.0
20
NOTE: 1. Reverse Recovery Time Test Conditions – IF=IR=10 mA, IR(REC) = 1.0 mA, C=3 pF, RL = 100 ohms.
MAXIMUM
JUNCTION
CAPACITANCE
f = 1 MHz
Vsig = 50 mV
(p-p)
VR=0 V VR=1.5 V
pf
pf
2.5
2.0
5.0
2.8
5.0
2.8
T4-LDS-0218-1, Rev. 1 (111513)
©2011 Microsemi Corporation
Page 2 of 5
Share Link: 