2SD1895 查看數據表（PDF） - Panasonic Corporation
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2SD1895 Datasheet PDF : 3 Pages
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Power Transistors
PC — Ta
120
(1) TC=Ta
(2) With a 100 × 100 × 2mm
100
Al heat sink
(3) Without heat sink
(1) (PC=3W)
80
60
40
20
(2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
100
IC/IB=1000
30
10
3
TC=100˚C
25˚C
–25˚C
1
0.3
0.1
0.1 0.3 1 3 10 30 100
Collector current IC (A)
100
30
10
tstg
3
ton
1 tf
ton, tstg, tf — IC
Pulsed tw=1ms
Duty cycle=1%
IC/IB=1000 (IB1=–IB2)
VCC=50V
TC=25˚C
0.3
0.1
0.03
0.01
0
4
8
12
16
Collector current IC (A)
IC — VCE
12
IB=2mA
TC=25˚C
10
1mA
0.9mA
8
0.8mA
0.7mA
6
0.6mA
0.5mA
4
0.4mA
0.3mA
2
0.2mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD1895
VBE(sat) — IC
100
IC/IB=1000
30
10
3
TC=–25˚C
1
100˚C
25˚C
0.3
0.1
0.1 0.3 1 3 10 30 100
Collector current IC (A)
hFE — IC
105
VCE=5V
104
TC=100˚C
103
25˚C
102 –25˚C
10
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
1000
300
100
Cob — VCB
IE=0
f=1MHz
30
10
3
1
1
3
10
30
100
Collector to base voltage VCB (V)
Area of safe operation (ASO)
100
30
ICP
10
IC
3
1
Non repetitive pulse
TC=25˚C
t=1ms
10ms
DC
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2
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