BCX53-16E6327 查看數據表（PDF） - Infineon Technologies

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BCX53-16E6327

PNP Silicon AF Transistors

Infineon Technologies 

BCX51...-BCX53...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BCX51

IC = 10 mA, IB = 0 , BCX52

IC = 10 mA, IB = 0 , BCX53

V(BR)CEO

45

-

60

-

80

-

V

-

-

-

Collector-base breakdown voltage

IC = 100 µA, IE = 0 , BCX51

IC = 100 µA, IE = 0 , BCX52

IC = 100 µA, IE = 0 , BCX53

V(BR)CBO

45

-

-

60

-

-

100 -

-

Emitter-base breakdown voltage

V(BR)EBO 5

-

-

IE = 10 µA, IC = 0

Collector-base cutoff current

ICBO

µA

VCB = 30 V, IE = 0

-

-

0.1

VCB = 30 V, IE = 0 , TA = 150 °C

-

-

20

DC current gain1)

hFE

-

IC = 5 mA, VCE = 2 V

25

-

-

IC = 150 mA, VCE = 2 V, BCX51...BCX53

40

- 250

IC = 150 mA, VCE = 2 V, BCX53-10

63 100 160

IC = 150 mA, VCE = 2 V, BCX51-16...BCX53-16

100 160 250

IC = 500 mA, VCE = 2 V

25

-

-

Collector-emitter saturation voltage1)

IC = 500 mA, IB = 50 mA

Base-emitter voltage1)

IC = 500 mA, VCE = 2 V

VCEsat

-

VBE(ON)

-

-

0.5 V

-

1

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 10 V, f = 20 MHz

fT

- 125 - MHz

1Pulse test: t < 300µs; D < 2%

3

2011-07-29

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