S8550 查看數據表（PDF） - Unspecified

零件编号

产品描述 (功能)

生产厂家

S8550

Silicon PNP transistor in a TO-92 Plastic Package

Unspecified 

S8550

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Base Current - Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

DATA SHEET

数值

Rating

-40

-25

-6.0

-800

-200

625

150

-55～150

单位

Unit

V

V

V

mA

mA

mW

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCBO IC=-0.1mA IE=0

VCEO IC=-2.0mA IB=0

最小值 典型值 最大值 单位

Min Typ Max Unit

-40

V

-25

V

Emitter to Base Breakdown Voltage VEBO IE=-0.1mA IC=0

-6.0

V

Collector Cut-Off Current

ICBO VCB=-35V IE=0

-0.1 μA

Emitter Cut-Off Current

IEBO VEB=-6.0V IC=0

-0.1 μA

hFE(1) VCE=-1.0V IC=-100mA 85

300

DC Current Gain

hFE(2) VCE=-1.0V IC=-500mA 40

Collector to Emitter Saturation

Voltage

hFE(3) VCE=-1.0V IC=-5.0mA 45

VCE(sat) IC=-500mA IB=-50mA

-0.28 -0.6 V

Base to Emitter Saturation Voltage VBE(sat) IC=-500mA IB=-50mA

-0.98 -1.2 V

Base to Emitter Voltage

VBE VCE=-1.0V IC=-10mA

-0.66 -1.0 V

Transition Frequency

Collector Output Capacitance

fT VCE=-10V IC=-50mA

Cob

VCB=-10V

f=1.0MHz

IE=0

100 200

15

MHz

pF

http://www.fsbrec.com

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