1SS184 查看數據表（PDF） - MAKO SEMICONDUCTOR CO.,LIMITED

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1SS184

Plastic-Encapsulate Diodes

MAKO SEMICONDUCTOR CO.,LIMITED 

Plastic-Encapsulate Diodes

SWITCHING DIODES

FEATURES

Low forward voltage : VF(3)=0.9V(typ.)

Fast reverse recovery time : trr=1.6ns(typ.)

1SS184

MARKING: B3

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Parameter

Symbol

Limits

Unit

Non-Repetitive Peak reverse

VRM

85

V

1. ANODE

M voDlCtagBelocking Voltage

VR

40 AKO Forward Continuous Current

IFM

ht 08 S Average Rectified Output

IO

tp -3 em CPuorrwenert Dissipation

PD

:// 78- ico Junction temperature

TJ

ww 87 nd Storage temperature range

TSTG

80

300

100

150

125

-55-125

V

2. ANODE

SOT-23

mA

3. CATHODE

mA

mW

w.ma 3 uctor ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

kos C Parameter

Symbol Min. Typ. Max. Unit

em o., Reverse Breakdown Voltage

V (BR)R

80

V

i.hk/ Limited Forward voltage

VF1

0.60

V

VF2

0.72

V

VF3

0.9

1.2

V

Conditions

IR=100μA

IF=1mA

IF=10mA

IF=100mA

Reverse current

IR1

0.1

uA VR=30V

IR2

0.5

uA VR=80V

Capacitance between terminals

CT

0.9

3.0

pF VR=0,f=1MHz

Reverse recovery time

t rr

1.6

4.0

ns IF=IR=10mA,Irr=0.1×IR

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/

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