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BAS86 查看數據表(PDF) - General Semiconductor

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BAS86
General
General Semiconductor General
BAS86 Datasheet PDF : 2 Pages
1 2
BAS86
Schottky Diode
MiniMELF (SOD-80C)
Cathode Band
New Product
Features
• For general purpose applications
.063 (1.6) Dia.
.051 (1.3)
• This diode features low turn-on voltage. The
devices are protected by a PN junction guard ring
against excessive voltage, such as electrostatic
discharges.
.146 (3.7)
.130 (3.3)
.019 (0.48)
.011 (0.28)
• Metal-on-silicon Schottky barrier device which is
protected by a PN junction guard ring.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications
Dimensions in inches and (millimeters)
• This diode is also available in a DO-35 case with
type designation BAT86.
Mechanical Data
Case: MiniMELF Glass Case (SOD-80C)
Weight: approx. 0.05g
Cathode Band Color: Green
Packaging Codes/Options:
D1/10K per 13” reel (8mm tape)
D2/2.5K per 7” reel (8mm tape)
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Continuous Reverse Voltage
Forward Continuous Current at Tamb = 25°C
Repetitive Forward Current at tp < 1s, υ ≤ 0.5, Tamb = 25°C
Power Dissipation at Tamb = 25°C
Thermal Resistance Junction to Ambiant Air
VR
IF
IFRM
Ptot
RθJA
50
200(1)
500(1)
200(1)
300(1)
Junction Temperature
Tj
125
Ambient Operating Temperature Range
Tamb
–65 to +125
Storage Temperature Range
TS
–65 to +150
Note: (1) Valid provided that electrodes are kept at ambient temperature.
Unit
V
mA
mA
mW
°C/W
°C
°C
°C
3/14/00

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