BAS86 查看數據表（PDF） - General Semiconductor
零件编号
产品描述 (功能)
生产厂家
BAS86 Datasheet PDF : 2 Pages
| |||
BAS86
Schottky Diode
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Breakdown Voltage
V(BR)R
IR = 10 µA (pulsed)
50
—
—
V
Leakage Current
IR
VR = 25V
—
0.2
0.5
µA
Forward Voltage
PulseTest tp < 300µs, δ < 2%
IF = 0.1mA
—
0.200 0.300
VF
IF = 1mA
IF = 10mA
—
—
0.275
0.365
0.380
0.450
V
IF = 30mA
—
0.460 0.600
IF = 100mA
—
0.700 0.900
Capacitance
Reverse Recovery Time
Ctot
VR = 1V, f = 1MHz
—
—
8
pF
trr
IF = 10mA, IR = 10mA
—
—
5
ns
IR = 1mA
Share Link: 