NDD04N60ZT4G(2013) 查看數據表（PDF） - ON Semiconductor
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NDD04N60ZT4G Datasheet PDF : 9 Pages
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NDF04N60Z, NDD04N60Z
THERMAL RESISTANCE
Parameter
Symbol
Junction−to−Case (Drain)
NDF04N60Z
NDD04N60Z
RqJC
Junction−to−Ambient Steady State
(Note 3) NDF04N60Z
(Note 4) NDD04N60Z
(Note 3) NDD04N60Z−1
RqJA
3. Insertion mounted
4. Surface mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 1 mA
Reference to 25°C,
ID = 1 mA
BVDSS
600
DBVDSS/
DTJ
Drain−to−Source Leakage Current
VDS = 600 V, VGS = 0 V
25°C
150°C
IDSS
Gate−to−Source Forward Leakage
VGS = ±20 V
IGSS
ON CHARACTERISTICS (Note 5)
Static Drain−to−Source
On−Resistance
VGS = 10 V, ID = 2.0 A
RDS(on)
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 6)
Output Capacitance (Note 6)
Reverse Transfer Capacitance
(Note 6)
VDS = VGS, ID = 50 mA
VDS = 15 V, ID = 2.0 A
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VGS(th)
3.0
gFS
Ciss
427
Coss
50
Crss
8
Total Gate Charge (Note 6)
Gate−to−Source Charge (Note 6)
Gate−to−Drain (“Miller”) Charge
VDD = 300 V, ID = 4.0 A,
VGS = 10 V
Plateau Voltage
Gate Resistance
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VDD = 300 V, ID = 4.0 A,
VGS = 10 V, RG = 5 Ω
Fall Time
Qg
10
Qgs
2
Qgd
5
VGP
Rg
td(on)
tr
td(off)
tf
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
IS = 4.0 A, VGS = 0 V
VSD
Reverse Recovery Time
Reverse Recovery Charge
VGS = 0 V, VDD = 30 V
trr
IS = 4.0 A, di/dt = 100 A/ms
Qrr
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
6. Guaranteed by design.
Value
4.2
1.5
50
38
80
Typ
0.6
1.8
3.9
3.3
535
62
14
19
3.9
10
6.5
4.7
13
9.0
24
15
285
1.3
Max
1
50
±10
2.0
4.5
640
75
20
29
6
15
1.6
Unit
°C/W
Unit
V
V/°C
mA
mA
W
V
S
pF
nC
nC
V
W
ns
V
ns
mC
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