NDD04N60ZT4G(2013) 查看數據表（PDF） - ON Semiconductor
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NDD04N60ZT4G Datasheet PDF : 9 Pages
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NDF04N60Z, NDD04N60Z
TYPICAL CHARACTERISTICS
1200
20
400
1000
800
VGS = 0 V
TJ = 25°C
f = 1.0 MHz
15
QT
300
VDS
600
Ciss
400
Coss
200
Crss
0
0
50
10
Qgs
Qgd
5
0
100
150
200 0
5
10
200
VGS
100
TJ = 25°C
ID = 4 A
0
15
20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
VDD = 300 V
ID = 4 A
VGS = 10 V
td(off)
tr
tf
td(on)
4
VGS = 0 V
TJ = 25°C
3
10
2
1
1
1
10
100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
VGS ≤ 30 V
Single Pulse
10 TC = 25°C
100 ms
1 ms
10 ms
dc
10 ms
1
0.1
0.01
0.1
RDS(on) Limit
Thermal Limit
Package Limit
1
10
100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area for NDF04N60Z
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
100
100 ms 10 ms
10
1 ms
10 ms
dc
1
VGS ≤ 30 V
Single Pulse
0.1
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.01
1
10
100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area for NDD04N60Z
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