NDD04N60Z 查看數據表（PDF） - ON Semiconductor
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NDD04N60Z Datasheet PDF : 8 Pages
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NDF04N60Z, NDP04N60Z, NDD04N60Z
TYPICAL CHARACTERISTICS
8
TJ = 25°C
6
15 V
10 V
7V
6.8 V
6.6 V
4
6.4 V
6.2 V
2
6.0 V
5.8 V
0
5.6 V
0
5
10
15
20
25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
8
VDS ≥ 30 V
6
4
TJ = 150°C
TJ = 25°C
2
TJ = −55°C
0
3
4
5
6
7
8
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
3.5
3
ID = 2 A
TJ = 25°C
3
TJ = 25°C
2.5
2.5
2
VGS = 10 V
2
1.5
1.5
1
5
6
7
8
9
VGS (V)
Figure 3. On−Resistance vs. Gate Voltage
2.6
ID = 2 A
VGS = 10 V
2
1
10
0.5
1
1.5
2
2.5
3
3.5
4
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
VGS = 0 V
1000
TJ = 150°C
1.4
0.8
0.2
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100
TJ = 100°C
10
0
100
200
300
400 500 600
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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