NDF04N60ZH(2013) 查看數據表（PDF） - ON Semiconductor

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NDF04N60ZH
(Rev.:2013)

N-Channel Power MOSFET 600 V, 2.0 Ω

ON Semiconductor 

NDF04N60Z, NDD04N60Z

TYPICAL CHARACTERISTICS

10

50% (DUTY CYCLE)

1.0 20%

10%

5.0%

2.0%

0.1

1.0%

SINGLE PULSE

0.01

0.000001 0.00001

0.0001

0.001

0.01

0.1

1.0

PULSE TIME (s)

Figure 13. Thermal Impedance for NDF04N60Z

10

50% (DUTY CYCLE)

1.0

20%

10%

0.1 5.0%

2.0%

1.0%

0.01 SINGLE PULSE

0.001

0.000001 0.00001

0.0001

0.001

0.01

0.1

1.0

PULSE TIME (s)

Figure 14. Thermal Impedance for NDD04N60Z

RqJC = 4.2°C/W

Steady State

10

100

1000

RqJC = 1.5°C/W

Steady State

10

100

1000

LEADS

HEATSINK

0.110″ MIN

Figure 15. Mounting Position for Isolation Test

Measurement made between leads and heatsink with all leads shorted together.

*For additional mounting information, please download the ON Semiconductor

Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

5

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