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BAT54J 查看數據表(PDF) - STMicroelectronics

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BAT54J
ST-Microelectronics
STMicroelectronics ST-Microelectronics
BAT54J Datasheet PDF : 5 Pages
1 2 3 4 5
Fig. 2: Reverse leakage current versus reverse
voltage applied (typical values).
BAT54J / W / AW / CW / SW
Fig. 3: Reverse leakage current versus junction
temperature.
IR(µA)
1E+2
1E+1
Tj=100°C
IR(µA)
1E+4
VR=30V
1E+3
1E+2
1E+0
Tj=50°C
1E+1
1E-1
1E-2
0
1E+0
Tj=25°C
1E-1
VR(V)
Tj(°C)
1E-2
5
10
15
20
25
30
0
25
50
75 100 125 150
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values).
Fig. 5: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
FR4 with recommended pad layout, e(Cu)=35µm)
C(pF)
10
5
2
1
1
2
VR(V)
5
10
F=1MHz
Tj=25°C
20 30
Zth(j-a)/Rth(j-a)
1.00
δ = 0.5
0.10
δ = 0.2
δ = 0.1
Single pulse
0.01
1E-3
1E-2
T
tp(s)
1E-1 1E+0
δ=tp/T
1E+1
tp
1E+2
Fig. 6: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printedcircuit board FR4, copper thickness: 35µm.)
Rth(j-a) (°C/W)
600
550
P=0.2W
500
450
400
350
300
0
S(Cu) (mm )
5 10 15 20 25 30 35 40 45 50
3/5

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