VS-10MQ060NTRPBF(2017) 查看數據表（PDF） - Vishay Semiconductors
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VS-10MQ060NTRPBF Datasheet PDF : 6 Pages
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10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 75 °C
0.01
TJ = 50 °C
0.001
TJ = 25 °C
0.0001
0
10
20
30
40
50
60
VR - Reverse Voltage (V)
Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
100
VS-10MQ060NTRPbF
Vishay Semiconductors
150
140
130
DC
120
D = 0.20
110 D = 0.25
D = 0.33
100 D = 0.50
D = 0.75
90 Square wave (D = 0.50)
80 80 % rated VR applied
See note (1)
70
0
0.4 0.8 1.2 1.6 2.0 2.4
IF(AV) - Average Forward Current (A)
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
1.4
D = 0.20
1.2
D = 0.25
D = 0.33
D = 0.50
1.0
D = 0.75
0.8
RMS limit
DC
0.6
0.4
0.2
0
0
0.4 0.8 1.2 1.6 2.0 2.4
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
100
10
TJ = 25 °C
10
0
10
20
30
40
50
60
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
At any rated load condition and
with rated VRRM applied
following surge
1
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 17-May-17
3
Document Number: 94118
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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