IRFR310B 查看數據表（PDF） - Kersemi Electronic Co., Ltd.
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IRFR310B Datasheet PDF : 9 Pages
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Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
100
6.0 V
5.5 V
Bottom : 5.0 V
10-1
10-2
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
12
10
V = 10V
GS
8
VGS = 20V
6
4
2
※ Note : TJ = 25℃
0
0
1
2
3
4
5
6
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
500
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss ds gd
Crss = Cgd
400
C
300
iss
200
100
0
10-1
Coss
Crss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
100
150oC
10-1
2
25oC
-55oC
※ Notes :
1.
2.
2V5DS0μ=s40PVulse
Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10-1
0.2
150℃
25℃
※ Notes :
1.
2.
V25G0Sμ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
6
4
2
0
0.0
V = 80V
DS
V = 200V
DS
V = 320V
DS
※ Note : I = 2.0 A
D
1.5
3.0
4.5
6.0
7.5
9.0
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
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