2SC3710A_04 查看數據表（PDF） - Toshiba
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2SC3710A_04 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3710A
2SC3710A
High-Current Switching Applications
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.4 V (max)
• High-speed switching: tstg = 1.0 µs (typ.)
• Complementary to 2SA1452A
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
80
V
80
V
6
V
12
A
2
A
30
W
150
°C
−55 to 150
°C
Electrical Characteristics (Tc = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
VCB = 80 V, IE = 0
VEB = 6 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
VCE = 1 V, IC = 1 A
(Note)
hFE (2)
VCE (sat)
VCE = 1 V, IC = 6 A
IC = 6 A, IB = 0.3 A
VBE (sat)
fT
Cob
IC = 6 A, IB = 0.3 A
VCE = 5 V, IC = 1 A
VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
―
―
10
µA
―
―
10
µA
80
―
―
V
70
― 240
40
―
―
―
0.2 0.4
V
―
0.9 1.2
V
―
80
― MHz
― 220 ―
pF
Turn-on time
ton
Output
20 µs Input IB1
Switching time Storage time
Fall time
tstg
IB2
VCC ≈ 30 V
tf
IB1 = −IB2 = 0.3 A, duty cycle ≤ 1%
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
1
―
0.2
―
―
1.0
―
µs
―
0.2
―
2004-07-07
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