1SS199_94 查看數據表（PDF） - Hitachi -> Renesas Electronics

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1SS199_94

Silicon Schottky Barrier Diode for Various Detector,High Speed Switching

Hitachi -> Renesas Electronics 

ADE-208-299(Z)

1SS199

Silicon Schottky Barrier Diode for

Various Detector,High Speed Switching

Features

• Detection efficiency is very good.

• Small temperature coefficient.

• Small glass package (MHD) enables easy

mounting and high reliability.

Ordering Information

Type No. Cathode band Mark Package Code

1SS199 Green

3

MHD

Outline

1

Rev. 0

Dec. 1994

2

Cathode band

1. Cathode

2. Anode

Absolute Maximum Ratings (Ta = 25°C)

Item

Reverse voltage

Average forward current

Junction temperature

Storage temperature

Symbol

VR

Io

Tj

Tstg

Value

Unit

30

V

15

mA

125

°C

-55 to +125

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Forward current

Reverse current

Capacitance

Rectifier efficiency

IF

3.0

—

IR

—

—

C

—

—

η

70

—

ESD-Capability

—

70

—

* Failure criterion ; IR ≥ 200µA at VR = 10V

Max

—

100

3.0

—

—

Unit

mV

µA

pF

%

V

Test Condition

VF = 1 V

VR = 10 V

VR = 1 V, f = 1 MHz

Vin=2Vrms,f=40MHz,RL=5kΩ

CL=20pF

*C=200pF

,

Both forward

direction 1

and reverse

pulse.

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