GN2A 查看數據表（PDF） - SynSemi, Inc.
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GN2A Datasheet PDF : 2 Pages
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GN2A - GN2M
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SMB Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.1079 gram
GLASS PASSIVATED JUNCTION
SILICON SURFACE MOUNT
SMB (DO-214AA)
1.1 ± 0.3
2.0 ± 0.1
3.6 ± 0.15
2.3 ± 0.2
0.22 ± 0.07
Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL GN2A GN2B GN2D GN2G GN2J GN2K GN2M UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
50
100 200 400 600 800 1000
V
Maximum RMS Voltage
VRMS
35
70 140 280 420 560 700
V
Maximum DC Blocking Voltage
VDC
50 100 200 400 600 800 1000 V
Maximum Average Forward Current Ta = 50 °C
IF(AV)
2.0
A
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
IFSM
50
A
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 2.0 Amps.
VF
1.0
V
Maximum DC Reverse Current
Ta = 25 °C
IR
5.0
µA
at rated DC Blocking Voltage
Ta = 100 °C
IR(H)
50
µA
Typical Junction Capacitance (Note1)
CJ
75
pF
Junction Temperature Range
TJ
- 65 to + 150
°C
Storage Temperature Range
TSTG
- 65 to + 150
°C
Note :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
Page 1 of 2
Rev. 02 : March 25, 2005
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