NDP02N60Z(2010) 查看數據表（PDF） - ON Semiconductor
零件编号
产品描述 (功能)
生产厂家
NDP02N60Z Datasheet PDF : 10 Pages
| |||
NDF02N60Z, NDP02N60Z, NDD02N60Z
TYPICAL CHARACTERISTICS
10
TJ = 150°C
1.0
TJ = 125°C
0.10
0 50 100 150 200 250 300 350 400 450 500 550 600
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Drain−to−Source Leakage Current
versus Voltage
600
550
TJ = 25°C
500
VGS = 0 V
450
f = 1 MHz
400
350
300
Ciss
250
200
150
100
50 Crss
0
05
Coss
10 15 20 25 30 35 40 45 50
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 8. Capacitance Variation
15.0
350
14.0
13.0
QT
300
12.0
11.0
VDS
250
10.0
9.0
8.0
7.0
QGS
6.0
QGD
VGS
200
150
5.0
4.0
3.0
2.0
100
VDS = 300 V
ID = 2.4 A 50
1.0
TJ = 25°C
0.0
0
0 1 2 3 4 5 6 7 8 9 10 11
Qg, TOTAL GATE CHARGE (nC)
Figure 9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000
100
VDD = 300 V
ID = 2.4 A
VGS = 10 V
10
td(off)
tr
tf
td(on)
1.0
1
10
100
RG, GATE RESISTANCE (W)
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
10.0
TJ = 150°C
1.0
125°C
25°C
−55°C
0.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Diode Forward Voltage versus
Current
http://onsemi.com
4
Share Link: 