NDD02N60ZT4G(2010) 查看數據表（PDF） - ON Semiconductor

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NDD02N60ZT4G
(Rev.:2010)

N-Channel Power MOSFET 600 V, 4.8 Ω

ON Semiconductor 

NDF02N60Z, NDP02N60Z, NDD02N60Z

10

50% (DUTY CYCLE)

20%

1

10%

5%

2%

0.1

1%

SINGLE PULSE

0.01

1E−06

1E−05

1E−04

1E−03

1E−02

1E−01

1E+00

1E+01

PULSE TIME (s)

Figure 16. Thermal Impedance (Junction−to−Case) for NDF02N60Z

RqJC = 5.2°C/W

Steady State

1E+02

1E+03

LEADS

HEATSINK

0.110″ MIN

Figure 17. Isolation Test Diagram

Measurement made between leads and heatsink with all leads shorted together.

*For additional mounting information, please download the ON Semiconductor

Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

6

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