BZW04-145HE3/54(2008) 查看數據表（PDF） - Vishay Semiconductors
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BZW04-145HE3/54 Datasheet PDF : 6 Pages
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BZW04P-5V8 thru BZW04-376
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
100
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
10
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at
Zero Bias
1
0.1
0.1
1
10
100
1000 10 000
td - Pulse Width (µs)
Figure 1. Peak Pulse Power Rating Curve
100
Measured at Stand-Off
Voltage VWM
10
1
10
100
VBR - Breakdown Voltage (V)
1000
Figure 4. Typical Junction Capacitance
100
75
50
25
0
0 25 50 75 100 125 150 175 200
TJ - Initial Temperature (°C)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
100
60 Hz
Resistive or
Inductive Load
75
50
L = 0.375" (9.5 mm)
Lead Lengths
25
0
0 25 50 75 100 125 150 175 200
TL - Lead Temperature (°C)
Figure 5. Power Derating Curve
150
tr = 10 µs
Peak Value
IPPM
100
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
Decays to 50 % of IPPM
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Figure 3. Pulse Waveform
100
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
10
1
10
100
Number of Cycles at 60 Hz
Figure 6. Max. Non-Repetitive Forward Surge Current
Uni-Directional Only
www.vishay.com
4
For technical questions within your region, please contact one of the following: Document Number: 88316
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 22-Oct-08
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