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BZW04-145B-E3/54 查看數據表(PDF) - Vishay Semiconductors

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BZW04-145B-E3/54
Vishay
Vishay Semiconductors Vishay
BZW04-145B-E3/54 Datasheet PDF : 6 Pages
1 2 3 4 5 6
www.vishay.com
BZW04P-5V8 thru BZW04-376
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
10 000
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
10
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at
Zero Bias
1
0.1
0.1
1
10
100
1000 10 000
td - Pulse Width (µs)
Fig. 1 - Peak Pulse Power Rating Curve
100
75
50
25
0
0 25 50 75 100 125 150 175 200
TJ - Initial Temperature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
150
tr = 10 µs
Peak Value
IPPM
100
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
Decays to 50 % of IPPM
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Fig. 3 - Pulse Waveform
100
Measured at Stand-Off
Voltage VWM
10
1
10
100
VBR - Breakdown Voltage (V)
1000
Fig. 4 - Typical Junction Capacitance
100
60 Hz
Resistive or
Inductive Load
75
50
L = 0.375" (9.5 mm)
Lead Lengths
25
0
0 25 50 75 100 125 150 175 200
TL - Lead Temperature (°C)
Fig. 5 - Power Derating Curve
100
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
10
1
10
100
Number of Cycles at 60 Hz
Fig. 6 - Max. Non-Repetitive Forward Surge Current
Uni-Directional Only
Revision: 12-Jul-11
4
Document Number: 88316
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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