2SK1960 查看數據表（PDF） - KEXIN Industrial

零件编号

产品描述 (功能)

生产厂家

2SK1960

MOS Field Effect Transistor

KEXIN Industrial 

SMD Type

MOS Field Effect Transistor

2SK1960

Features

Gate can be driven by 1.5V

Low ON resistance

RDS(on)=0.8 MAX.@VGS=1.5V,ID=0.1A

RDS(on)=0.2 MAX.@VGS=4.0V,ID=1.5A

SOT-89

4.50+0.1

-0.1

1.80+0.1

-0.1

12 3

0.48+0.1

-0.1

0.53+0.1

-0.1

MOSFICET

Unit: mm

1.50+0.1

-0.1

0.44+0.1

-0.1

3.00+0.1

-0.1

1 Gate

11.. SBoauserce

2 Drain

22.. DCroallienctor

333.. GSEmaotuieitrtcere

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Drain current

Power dissipation

Channel temperature

Storage temperature

Symbol

Rating

Unit

VDSS

16

V

VGSS

7

V

ID

3.0

A

IDP

6.0

A

PD

2.0

W

Tch

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gate to Source Cutoff Voltage

Forward transfer admittance

Drain to source on-state resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Symbol

Testconditons

IDSS VDS=16V,VGS=0

IGSS VGS= 7V,VDS=0

VGS(off) VDS=3V,ID=1mA

Yfs VDS=3V,ID=1.5A

VGS=1.5V,ID=0.1A

RDS(on) VGS=2.5V,ID=1.5A

VGS=4.0V,ID=1.5A

Ciss

Coss VDS=3V,VGS=0,f=1MHZ

Crss

td(on)

tr

td(off)

ID=1.5A,VGS(on)=3V,RL=2

,VDD=3V,RG=10

tf

Min Typ Max Unit

100

A

3.0 A

0.5 0.8 1.1 V

2.0

S

0.35 0.8

0.17 0.3

0.12 0.2

370

pF

320

pF

115

pF

70

ns

200

ns

150

ns

200

ns

www.kexin.com.cn 1

Share Link: