2SB1182TL 查看數據表（PDF） - ROHM Semiconductor
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2SB1182TL Datasheet PDF : 4 Pages
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Medium power transistor (32V, 2A)
2SB1182 / 2SB1240
Features
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements 2SD1758 / 2SD1862.
Structure
Epitaxial planar type
PNP silicon transistor
Dimensions (Unit : mm)
2SB1182
6.5±0.2
5.1+−00..21
C0.5
2.3+−00..21
0.5±0.1
2SB1240
6.8±0.2
2.5±0.2
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1
1.0±0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
−40
VCEO
−32
VEBO
−5
Collector current
−2
IC
−3
Collector power 2SB1182
dissipation
2SB1240
10
PC
1
Junction temperature
Tj
150
Storage temperature
Tstg
−55 to 150
∗1 Single pulse, Pw=100ms
∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
Unit
V
V
V
A(DC)
A (Pulse) ∗1
W (Tc=25°C)
W ∗2
°C
°C
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO −40
Collector-emitter breakdown voltage BVCEO −32
Emitter-base breakdown voltage
BVEBO
−5
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE
120
Transition frequency
fT
−
Output capacitance
∗ Measured using pulse current.
Cob
−
Typ.
−
−
−
−
−
−0.5
−
100
50
Max.
−
−
−
−1
−1
−0.8
390
−
−
Unit
V
V
V
μA
μA
V
−
MHz
pF
Conditions
IC= −50μA
IC= −1mA
IE= −50μA
VCB= −20V
VEB= −4V
IC/IB= −2A/ −0.2A
∗
VCE= −3V, IC= −0.5A
∗
VCE= −5V, IE=0.5A, f=100MHz
VCB= −10V, IE=0A, f=1MHz
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○c 2010 ROHM Co., Ltd. All rights reserved.
2010.04 - Rev.C
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