2SB1182 查看數據表（PDF） - Inchange Semiconductor

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2SB1182

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

2SB1182

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -200mA

V(BR)CBO Collector-Base Breakdown Voltage IC= -50uA; IB= 0

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -50uA; IC= 0

ICBO

Collector Cutoff Current

VCB= -20V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -4V; IC= 0

hFE

DC Current Gain

IC= -0.5A; VCE= -3V

COB

Output Capacitance

IE= 0; VCB= -10V; f= 1.0MHz

fT

Current-Gain—Bandwidth Product IC= -500mA; VCE= -5V

MIN TYP. MAX UNIT

-0.8 V

-40

V

-32

V

-6

V

-1.0 μA

-1.0 μA

82

390

50

pF

100

MHz

 hFE Classifications

P

Q

R

82-180 120-270 180-390

isc website：www.iscsemi.com

2 isc & iscsemi is registered trademark

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