2SB1386T100_07 查看數據表（PDF） - ROHM Semiconductor
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2SB1386T100_07 Datasheet PDF : 5 Pages
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Transistors
2SB1386 / 2SB1412
−5
lC/lB=50
−2
−1
−0.5
−25°C
25°C
Ta=100°C
−0.2
−0.1
−0.05
−0.02
−0.01
−2m −5m −0.01−0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10
COLLECTOR CURRENT : IC (A)
Fig.10 Collector-emitter saturation
voltage vs. collector current ( )
1 000
500
Ta=25°C
VCE= −6V
200
100
50
20
10
5
2
1
12
5 10 20 50 100 200 500 1000
EMITTER CURRENT : IE (mA)
Fig.11 Gain bandwidth product
vs. emitter current
1000
500
200
100
50
Ta=25°C
f=1MHz
IE=0A
20
10
−0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.12 Collector output capacitance
vs. collector-base voltage
1000
500
200
100
50
Ta=25°C
f=1MHz
IC=0A
20
10
−0.1 −0.2 −0.5 −1 −2
−5 −10
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.13 Emitter input capacitance
vs. emitter-base voltage
100
50
∗Ta=25°C
Single
20
nonrepetitive
pulse
10
5
2
1
DC
500m
200m
100m
50m
20m
10m
0.2 0.5 1 2 5 10 20 50 100 200 500
COLLECTOR TO EMITTER VOLTAGE : −VCE (V)
Fig.14 Safe operation area
F(2SB1412)
Rev.B
4/4
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