MGF7169C 查看數據表（PDF） - MITSUBISHI ELECTRIC
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MGF7169C Datasheet PDF : 20 Pages
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Preliminary
information
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGF7169C
UHF BAND GaAs POWER AMPLIFIER
Temp. dependence of Fin vs. Gain,ACPR
25
-10
Gain
20
-20
15
-30
ACPR
10
-40
-30 -10 10 30 50 70 90
Temperature (Åé)
Temp. dependence of Fin vs. Id1,Id2
150
600
Id2
500
100
400
300
50
Id1
200
100
0
0
-30 -10 10 30 50 70 90
Temperature (Åé)
f=1.85GHz
f=1.88GHz
f=1.91GHz
Vd1=Vd2=3.0V
Vg1=Vg2=-2.0V
Pout=28dBm
f=1.85GHz
f=1.88GHz
f=1.91GHz
Vd1=Vd2=3.0V
Vg1=Vg2=-2.0V
Pout=28dBm
MITSUBISHI ELECTRIC
(10/20)
Aug. '97
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