NGTB15N120FL2W/D(2015) 查看數據表（PDF） - ON Semiconductor
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NGTB15N120FL2W/D Datasheet PDF : 10 Pages
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NGTB15N120FL2WG
TYPICAL CHARACTERISTICS
1.6
1.4
VCE = 600 V
VGE = 15 V
1.2
TJ = 150°C
IC = 15 A
1.0
0.8
0.6
0.4
0.2
0
5 15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
1000
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 15 A
td(off)
tf
100
5
15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W)
Figure 14. Switching Time vs. Rg
1.0
0.9
0.8
0.7
0.6
0.5
0.4
VGE = 15 V
0.3
TJ = 150°C
IC = 15 A
0.2
Rg = 10 W
0.1
0
350 400 450 500 550 600 650 700 750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
1000
VGE = 15 V
TJ = 150°C
IC = 15 A
Rg = 10 W
tf
td(off)
100
350 400 450 500 550 600 650 700 750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Switching Time vs. VCE
1000
1000
100
10
1
0.1
1
dc operation
50 ms
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
100 ms
1 ms
10
100
1000
10k
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
100
10
VGE = 15 V, TC = 125°C
1
1
10
100
1000
10k
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
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