MGP11N60ED 查看數據表（PDF） - Motorola => Freescale
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MGP11N60ED Datasheet PDF : 6 Pages
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MGP11N60ED
1600
Cies
TJ = 25°C
VGE = 0 V
800
Coes
Cres
0
0
5
10
15
20
25
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
0.85
TJ = 125°C
0.75 VDD = 360 V
VGE = 15 V
0.65
0.55
IC = 8.0 A
6.0 A
0.45
4.0 A
0.35
0.25
0.15
5
15
25
35
45
55
RG, GATE RESISTANCE (OHMS)
Figure 7. Total Energy Losses versus
Gate Resistance
20
16
QT
12
Q1
Q2
8
4
TJ = 25°C
VCC = 300 V
IC = 8.0 A
0
0
10
20
30
40
50
Qg, TOTAL GATE CHARGE (nC)
Figure 6. Gate–To–Emitter Voltage versus
Total Charge
0.8
VCC = 360 V
W 0.7 VGE = 15 V
0.6 RG = 20
0.5
IC = 8.0 A
6.0 A
0.4
4.0 A
0.3
0.2
0.1
0
–50 –25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Total Energy Losses versus
Junction Temperature
0.9
TJ = 125°C
0.8 VCC = 360 V
W 0.7 VGE = 15 V
RG = 20
0.6
0.5
0.4
0.3
0.2
0.1
0
0
2
4
6
8
10
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Total Energy Losses versus
Collector Current
0.6
TJ = 125°C
VDD = 360 V
VGE = 15 V
0.5
IC = 8.0 A
0.4
6.0 A
0.3
4.0 A
0.2
5
15
25
35
45
RG, GATE RESISTANCE (OHMS)
Figure 10. Turn–Off Losses versus
Gate Resistance
4
Motorola IGBT Device Data
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