MPS650 查看數據表（PDF） - Motorola => Freescale

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MPS650

Amplifier Transistors

Motorola => Freescale 

NPN MPS650 MPS651 PNP MPS750 MPS751

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS(1)

DC Current Gain

(IC = 50 mA, VCE = 2.0 V)

(IC = 500 mA, VCE = 2.0 V)

(IC = 1.0 A, VCE = 2.0 V)

(IC = 2.0 A, VCE = 2.0 V)

hFE

—

75

—

75

—

75

—

40

—

Collector – Emitter Saturation Voltage

(IC = 2.0 A, IB = 200 mA)

(IC = 1.0 A, IB = 100 mA)

VCE(sat)

—

—

Vdc

0.5

0.3

Base–Emitter On Voltage (IC = 1.0 A, VCE = 2.0 V)

VBE(on)

—

1.0

Vdc

Base – Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA)

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product(2)

(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

VBE(sat)

—

fT

75

1.2

Vdc

—

MHz

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.

2. fT is defined as the frequency at which |hfe| extrapolates to unity.

300

270

240 TJ = 125°C

NPN

VCE = 2.0 V

210

180

25°C

150

120

– 55°C

90

60

30

0

10 20

50 100 200 500 1.0 A 2.0 A 4.0 A

IC, COLLECTOR CURRENT (mA)

Figure 1. MPS650, MPS651

Typical DC Current Gain

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

50

NPN

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 2.0 V

VCE(sat) @ IC/IB = 10

100 200

500 1.0 A

IC, COLLECTOR CURRENT (mA)

2.0 A 4.0 A

Figure 3. MPS650, MPS651

On Voltages

250

225 TJ = 125°C

200

PNP

VCE = –2.0 V

175

25°C

150

125

100

– 55°C

75

50

25

0

–10 – 20

– 50 –10 – 200 – 500 –1.0 A –2.0 A –4.0 A

IC, C0OLLECTOR CURRENT (mA)

Figure 2. MPS750, MPS751

Typical DC Current Gain

–2.0

–1.8

–1.6

–1.4

–1.2

–1.0

–0.8

–0.6

–0.4

–0.2

0

–50

PNP

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 2.0 V

VCE(sat) @ IC/IB = 10

–10

–20

–50 –1.0 A –2.0 A –4.0 A

0 IC, CO0LLECTOR CU0RRENT (mA)

Figure 4. MPS750, MPS751

On Voltages

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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