TDA7550R_01 查看數據表（PDF） - STMicroelectronics
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TDA7550R_01 Datasheet PDF : 10 Pages
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TDA7550R
ELECTRICAL CHARACTERISTICS FOR I/O PINS:
Table 2. Recommended DC Operating Conditions
Symbol
Parameter
Vdd
Power Supply Voltage
Tj
Operating Junction Temperature
(*) All the specifications are valid only within these recommended operating conditions.
Value
Unit
3.15 to 3.6 (*)
V
-40 to +125
°C
Table 3. General Interface Electrical Characteristics
Symbol
Iil
Iih
Ioz
IozFT
Parameter
Low level Input Current Without
pullup device 1)
High Level Input Current
Without pulldown device 1)
Tri-state Output leakage
Without pull up/down device 1)
Five Volt tolerant Tri-state
Output leakage Without pull
up/down device 1)
Test Condition
Vi = 0V
Vi = Vdd
Vo = 0V or Vdd
Vo = 0V or Vdd
Vo = 5.5V
Min. Typ. Max. Unit
1
µA
1
µA
1
µA
1
µA
1
3
µA
I latchup I/O Latch-up current
V < 0V, V < Vdd
200
mA
Vesd
Electrostatic Protection 2)
leakage < 1µA
2000
V
Note 1. The leakage currents are generally are generally very small, <1nA. The value given here, 1mA, is a maximum that can occur after
an Electrostatic Stress on the pin.
Note 2. Human Body Model.
Table 4. Low Voltage TTL Interface DC Electrical Characteristics
Symbol
Vil
Vih
Vilhyst
Vihhyst
Vhyst
Vol
Voh
Parameter
Low Level Input Voltage 1)
High Level Input Voltage 1)
Low level threshold input falling1)
High level threshold input falling1)
Schmitt trigger hysteresis 1)
Low level output Voltage 1),2),3)
High level output Voltage 1),2),3)
Test Condition
Iol = XmA
Iol = XmA
Min. Typ. Max. Unit
0.8
V
2
V
0.9
1.35
V
1.3
1.9
V
0.4
0.7
V
0.4
V
2.4
V
Note 1. TTL specifications only apply to the supply voltage range Vdd = 3.15V to 3.6V.
Note 2. Takes into account 200mV voltagedrop in both supply lines.
Note 3. X is the source/sink current under worst case conditions and is reflected in the name of the I/O cell according to the drive capability.
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