7N60_10 查看數據表（PDF） - Unisonic Technologies

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7N60_10

7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

Unisonic Technologies 

7N60

Power MOSFET

„ ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

SWITCHING CHARACTERISTICS

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

QG

QGS

VDS=480V, ID=7.4A, VGS=10 V

(Note 1, 2)

QGD

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

Maximum Continuous Drain-Source Diode

Forward Current

VSD

VGS = 0V, IS = 7.4 A

IS

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Reverse Recovery Time

tRR

VGS = 0V, IS = 7.4 A,

Reverse Recovery Charge

QRR

dIF / dt = 100A/μs (Note 1)

Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

MIN TYP MAX UNIT

29 38 nC

7

nC

14.5

nC

1.4 V

7.4 A

29.6 A

320

ns

2.4

μC

„ CLASSIFICATION OF RDS(ON)

RANK

VALUE

-

1.0Ω

F

1.2Ω

M

1.2Ω

Q

1.2Ω

R

1.0Ω

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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