7N60 查看數據表（PDF） - Zibo Seno Electronic Engineering Co.,Ltd
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7N60 Datasheet PDF : 7 Pages
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Z ibo Seno Electronic Engineering Co., Ltd.
7N60 7N65
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
7N60
600
V
Drain-Source Voltage
7N65
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
7.0
A
Drain Current
Continuous
ID
Pulsed (Note 2)
IDM
Avalanche Energy Single Pulsed (Note 3)
EAS
Repetitive (Note 2)
EAR
7.0
A
29.6
A
530
mJ
14.2
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
142
W
TO-220F
48
W
Power Dissipation TO-262/I2PAK
TO-263/D2PAK
PD
(TC = 25°С)
142
142
W
W
Junction Temperature
TJ
+150
°С
Ambient Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=64mH, IAS=7.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤7.0A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220/ITO-220/TO-220F
Junction to Ambient TO-262/TO-263
TO-251/ TO-252
TO-220/TO-262/TO-263
Junction to Case
ITO-220/TO-220F
TO-251/ TO-252
SYMBOL
θJA
θJC
RATING
62.5
160
1.25
3.5
2.5
UNIT
°C/W
°C/W
7N60 7N65
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