2SA1577Q_15 查看數據表（PDF） - ROHM Semiconductor

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2SA1577Q_15

Medium Power Transistor (-32V, -500mA)

ROHM Semiconductor 

2SA1577

　 　 　 　　 　

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

　 　 　 　 　 　 　 　 Datasheet

Symbol

Values

Unit

VCBO

-40

V

VCEO

-32

V

VEBO

-5

V

IC

-500

mA

PD*1

200

mW

Tj

150

℃

Tstg

-55 to +150

℃

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min. Typ. Max.

Collector-base breakdown

voltage

BVCBO IC = -100μA

-40 -

-

V

Collector-emitter breakdown

voltage

BVCEO IC = -1mA

-32 -

-

V

Emitter-base breakdown voltage BVEBO IE = -100μA

-5

-

-

V

Collector cut-off current

ICBO VCB = -20V

-

- -1.0 μA

Emitter cut-off current

IEBO VEB = -4V

-

- -1.0 μA

Collector-emitter saturation voltage VCE(sat) IC = -300mA, IB = -30mA -

- -600 mV

DC current gain

hFE VCE = -3V, IC = -10mA 120 - 390 -

Transition frequency

fT

VCE = -5V, IE = 20mA,

f = 100MHz

- 200 - MHz

Output capacitance

Cob

VCB = -10V, IE = 0A,

f = 1MHz

- 7.0 - pF

hFE values are calssified as follows :

rank

Q

R

-

-

-

hFE

120-270

180-390

-

-

-

*1 Each terminal mounted on a reference land.

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　

　

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