MMBT5550L 查看數據表（PDF） - ON Semiconductor
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MMBT5550L Datasheet PDF : 6 Pages
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MMBT5550L, MMBT5551L
TYPICAL CHARACTERISTICS
1.10
1.00 IC/IB = 10
-55°C
1.10
1.00 VCE = 10 V
0.90
0.90
-55°C
0.80
25°C
0.80
25°C
0.70
0.70
0.60
150°C
0.60
0.50
0.50
150°C
0.40
0.40
0.30
0.30
0.20
0.20
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. VBE(sat)
Figure 6. VBE(on)
2.5
2.0
TJ = - 55°C to +135°C
1.5
1.0
0.5
qVC for VCE(sat)
0
- 0.5
- 1.0
qVB for VBE(sat)
- 1.5
- 2.0
- 2.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
IC, COLLECTOR CURRENT (mA)
Figure 7. Temperature Coefficients
100
70
TJ = 25°C
50
30
20
10
7.0
Cibo
5.0
3.0
Cobo
2.0
1.0
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitances
10.2 V
Vin
10 ms
INPUT PULSE
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
VBB
- 8.8 V
100
0.25 mF RB
5.1 k
Vin
100
VCC
30 V
3.0 k RC
Vout
1N914
Values Shown are for IC @ 10 mA
Figure 9. Switching Time Test Circuit
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