MMBT5550LT1 查看數據表（PDF） - ON Semiconductor
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MMBT5550LT1 Datasheet PDF : 6 Pages
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MMBT5550LT1, MMBT5551LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
MMBT5550
140
MMBT5551
160
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
MMBT5550
160
MMBT5551
180
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100°C)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS
V(BR)EBO
6.0
ICBO
MMBT5550
−
MMBT5551
−
MMBT5550
−
MMBT5551
−
IEBO
−
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE
MMBT5550
60
MMBT5551
80
MMBT5550
60
MMBT5551
80
MMBT5550
20
MMBT5551
30
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
Both Types
−
MMBT5550
−
MMBT5551
−
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
Both Types
−
MMBT5550
−
MMBT5551
−
Collector Emitter Cut−off
(VCB = 10 V)
(VCB = 75 V)
ICES
Both Types
−
−
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Max
Unit
Vdc
−
−
Vdc
−
−
Vdc
−
100
nAdc
50
100
mAdc
50
nAdc
50
−
−
−
250
250
−
−
Vdc
0.15
0.25
0.20
Vdc
1.0
1.2
1.0
nA
50
100
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