SMBJ110CHE3/52 查看數據表（PDF） - Vishay Semiconductors
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SMBJ110CHE3/52 Datasheet PDF : 6 Pages
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SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance, junction to ambient (1)
RθJA
Typical thermal resistance, junction to lead
RθJL
Note:
(1) Mounted on minimum recommended pad layout
VALUE
100
20
UNIT
°C/W
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
SMBJ5.0A-E3/52
0.096
52
SMBJ5.0A-E3/5B
0.096
5B
SMBJ5.0AHE3/52 (1)
0.096
52
SMBJ5.0AHE3/5B (1)
0.096
5B
Note:
(1) Automotive grade AEC Q101 qualified
BASE QUANTITY
750
3200
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
100
10
150
tr = 10 µs
TJ = 25 °C
Pulse Width (td)
is defined as the Point
100
Peak Value
IPPM
where the Peak Current
decays to 50 % of IPPM
1
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1 µs
1.0 µs 10 µs 100 µs 1.0 ms
td - Pulse Width (s)
10 ms
Figure 1. Peak Pulse Power Rating Curve
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Figure 3. Pulse Waveform
100
75
50
25
0
0 25 50 75 100 125 150 175 200
TJ - Initial Temperature (°C)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
6000
1000
Measured at
Zero Bias
100
VR, Measured at Stand-Off
Voltage VWM
10
1
Uni-Directional
Bi-Directional
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
100 200
VWM - Reverse Stand-Off Voltage (V)
Figure 4. Typical Junction Capacitance
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For technical questions within your region, please contact one of the following: Document Number: 88392
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 04-Sep-07
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