SMBJ110A_ 查看數據表（PDF） - Jiangsu High diode Semiconductor Co., Ltd
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SMBJ110A_ Datasheet PDF : 7 Pages
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SMBJ SERIES
SMB Plastic-Encapsulate Diodes
Transient Voltage Suppressor Diodes
Features
●PPP
600W
● VRWM
5.0V- 440V
●Glass passivated chip
Applications
●Clamping Voltage
Marking
● SMBJ
XXCA/XXA/XX
XX : From 5.0 To 440
SMB
Bi-directional
Uni-direction
HD BK 70
Item
Peak power dissipation
Peak pulse current
Power dissipation
Peak forward surge current
Operating junction and
storage temperature range
Symbol Unit
Conditions
PPPM
W
with a 10/1000us waveform
IPPM
A
with a 10/1000us waveform
PD
W
On infinite heat sink at TL=75℃
IFSM
A 8.3 ms single half sine-wave unidirectional only
TJ,TSTG
℃
Max
600
See Next Table
5.0
100
-55 to +150
Electrical Characteristics（Ta=25℃ Unless otherwise specified）
Item
Symbol Unit
Conditions
Maximum instantaneous forward
VF
V
Voltage
at 50A for unidirectional only
Thermal resistance
RθJL
℃/W
RθJA
℃/W
junction to lead
junction to ambient
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA= 25℃ per Fig.2.
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
(3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V
Max
3.5/5.0
20
100
High Diode Semiconductor
1
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