K6R1016C1 查看數據表（PDF） - Samsung

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K6R1016C1

64K x 16 Bit High-Speed CMOS Static RAM

Samsung 

K6R1016C1D

PRELIMINARY

CMOS SRAM

DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Max Unit

Input Leakage Current

Output Leakage Current

ILI

VIN=VSS to VCC

ILO

CS=VIH or OE=VIH or WE=VIL

VOUT=VSS to VCC

-2

2

µA

-2

2

µA

Operating Current

ICC

Min. Cycle, 100% Duty

Com.

10ns

-

65

mA

CS=VIL, VIN=VIH or VIL, IOUT=0mA

Ind.

10ns

-

75

Standby Current

ISB

Min. Cycle, CS=VIH

-

20

mA

Output Low Voltage Level

ISB1

f=0MHz, CS≥VCC-0.2V,

VIN≥VCC-0.2V or VIN≤0.2V

VOL

IOL=8mA

-

5

-

0.4

V

Output High Voltage Level

VOH

IOH=-4mA

2.4

-

V

* The above parameters are also guaranteed at industrial temperature range.

CAPACITANCE*(TA=25°C, f=1.0MHz)

Item

Symbol

Test Conditions

TYP

Max

Unit

Input/Output Capacitance

CI/O

VI/O=0V

-

8

pF

Input Capacitance

CIN

VIN=0V

-

6

pF

* Capacitance is sampled and not 100% tested.

AC CHARACTERISTICS(TA=0 to 70°C, VCC=5.0V±10%, unless otherwise noted.)

TEST CONDITIONS*

Parameter

Value

Input Pulse Levels

0V to 3V

Input Rise and Fall Times

3ns

Input and Output timing Reference Levels

1.5V

Output Loads

See below

* The above test conditions are also applied at industrial temperature range.

Output Loads(A)

DOUT

ZO = 50Ω

RL = 50Ω

VL = 1.5V

30pF*

Output Loads(B)

for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ

DOUT

255Ω

+5.0V

480Ω

5pF*

* Capacitive Load consists of all components of the

test environment.

* Including Scope and Jig Capacitance

-5-

Rev. 3.0

July 2004

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