K6R1008C1D-TC10 查看數據表（PDF） - Samsung

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K6R1008C1D-TC10

128K x 8 Bit High-Speed CMOS Static RAM(5.0V Operating)

Samsung 

K6R1008C1D

PRELIMINARY

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CMOS SRAM

ABSOLUTE MAXIMUM RATINGS*

Parameter

Voltage on Any Pin Relative to VSS

Voltage on VCC Supply Relative to VSS

Power Dissipation

Storage Temperature

Operating Temperature

Commercial

Industrial

Symbol

VIN, VOUT

VCC

Pd

TSTG

TA

TA

Rating

-0.5 to Vcc+0.5V

-0.5 to 7.0

1

-65 to 150

0 to 70

-40 to 85

Unit

V

V

W

°C

°C

°C

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.

Exposure to absolute maximum rating conditions for extended periods may affect reliability.

RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70°C)

Parameter

Supply Voltage

Ground

Input High Voltage

Input Low Voltage

Symbol

Min

Typ

VCC

4.5

5.0

VSS

0

0

VIH

2.2

-

VIL

-0.5**

-

* The above parameters are also guaranteed at industrial temperature range.

** VIL(Min) = -2.0V a.c(Pulse Width ≤ 8ns) for I ≤ 20mA.

*** VIH(Max) = VCC + 2.0V a.c (Pulse Width ≤ 8ns) for I ≤ 20mA.

Max

5.5

0

VCC + 0.5***

0.8

Unit

V

V

V

V

DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Max Unit

Input Leakage Current

ILI

VIN=VSS to VCC

-2

2

µA

Output Leakage Current

ILO

CS=VIH or OE=VIH or WE=VIL

VOUT=VSS to VCC

-2

2

µA

Operating Current

ICC

Min. Cycle, 100% Duty

Com.

10ns

-

65

mA

CS=VIL, VIN=VIH or VIL, IOUT=0mA

12ns

-

55

Ind.

10ns

-

75

12ns

-

65

Standby Current

ISB

Min. Cycle, CS=VIH

-

20

mA

ISB1

f=0MHz, CS≥VCC-0.2V,

VIN≥VCC-0.2V or VIN≤0.2V

-

5

Output Low Voltage Level

VOL

IOL=8mA

-

0.4

V

Output High Voltage Level

VOH

IOH=-4mA

2.4

-

V

* The above parameters are also guaranteed at industrial temperature range.

CAPACITANCE*(TA=25°C, f=1.0MHz)

Item

Symbol

Test Conditions

MIN

Max

Unit

Input/Output Capacitance

CI/O

VI/O=0V

-

8

pF

Input Capacitance

CIN

VIN=0V

-

6

pF

* Capacitance is sampled and not 100% tested.

-4-

Revision 0.2

December 2001

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