MPSA06L-T92-B 查看數據表（PDF） - Unisonic Technologies

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MPSA06L-T92-B

NPN TRANSISTOR

Unisonic Technologies 

MPSA06

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

VEBO

4

V

Collector Current - Continuous

IC

500

mA

Total device Dissipation, @TA=25°С

Derate above 25°С

625

mW

PD

5

mW/°С

Total device Dissipation, @TC=25°С

Derate above 25°С

1500

mW

PD

12

mW/°С

Junction Temperature

TJ

+125

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ THERMAL CHARACTERISTICS

Junction-to-Ambient

Junction-to-Case

PARAMETER

SYMBOL

θJA

θJC

MIN

TYP

„ ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)

MAX

200

83.3

UNIT

°С/W

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(Note 1)

BVCEO

IC=1.0mA, IB=0

Emitter-Base Breakdown Voltage

BVEBO IE=100μA, Ic=0

Collector Cutoff Current

ICEO

VCE=60V, IB=0

Collector Cutoff Current

ICBO

VCB=80V, IE=0

ON CHARACTERISTICS

Dc Current Gain

hFE

IC=10mA, VCE=1V

IC=100mA, VCE=1V

Collector-Emitter Saturation Voltage VCE(SAT) IC=100mA, IB=10mA

Base-Emitter On Voltage

VBE(ON) IC=100mA, VCE=1V

SMALL-SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product

(Note 2)

fT

IC=10mA, VCE=2V, f=100MHz

Note 1. Pulse test: PW<=300μs, Duty Cycle<=2%

2. fT is defined as the frequency at which IhfeI extrapolates to unity.

MIN TYP MAX UNIT

80

V

4

V

0.1 μA

0.1 μA

100

100

0.25 V

1.2 V

100

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R201-035.C

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