BFS17W(2001) 查看數據表（PDF） - Infineon Technologies

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BFS17W
(Rev.:2001)

NPN Silicon RF Transistor

Infineon Technologies 

BFS17W

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

AC characteristics

Transition frequency

IC = 2 mA, VCE = 5 V, f = 200 MHz

IC = 25 mA, VCE = 5 V, f = 200 MHz

Collector-base capacitance

VCB = 5 V, f = 1 MHz

Collector-emitter capacitance

VCE = 5 V, f = 1 MHz

Input capacitance

VEB = 0.5 V, IC = 0 , f = 1 MHz

Output capacitance

VCE = 5 V, VBE = 0 , f = 1 MHz

Noise figure

IC = 2 mA, VCE = 5 V, f = 800 MHz,

ZS = 0

Transducer gain

IC = 20 mA, VCE = 5 V, ZS = ZL = 50 ,

f = 500 MHz

fT

Ccb

Cce

Cibo

Cobs

F

GHz

1

1.4

-

1.3 2.5

-

-

0.6 0.8 pF

- 0.26 -

- 1.45 -

-

-

1.5

-

3.5

5 dB

|S21e|2

- 12.7 -

Linear output voltage

IC = 14 mA, VCE = 5 V, dim = 60 dB,

f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50

Third order intercept point

IC = 14 mA, VCE = 5 V, ZS = ZL = 50 ,

f = 800 MHz

V01=V02

-

100

- mV

IP3

-

23

- dBm

3

Jul-13-2001

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